Variations of differential capacitance in SrBi 2 Ta 2 O 9 ferroelectric films induced by photoperturbation
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چکیده
منابع مشابه
Structure of post - annealed ferroelectric PbZr Ti O and SrBi Ta O thin x 1 – x 3 2 2 9 films
In order to fabricate good quality ferroelectric thin films, PbZr Ti O (PZT) and SrBi Ta O (SBT) films were fabricated x 1–x 3 2 2 9 ( ) on SiO ySi(100) substrates and on PtyTiy SiO ySi(100) substrates by pulsed laser excimer deposition (PLD). X-ray diffraction, 2 2 Rutherford backscattering analysis, and atomic force microscopy were used to characterize the structural properties of the samples...
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Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferr...
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تاریخ انتشار 2014